Dynamic SPICE-simulation of the electrothermal behavior of SOI MOSFET's
- 1 November 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 42 (11) , 1968-1974
- https://doi.org/10.1109/16.469405
Abstract
A complete electrothermal model of the SOI MOSFET is implemented and can be used in SPICE3. This model is formulated as a set of algebraic and (partial) differential equations which is converted automatically with a model translator into a SPICE3 netlist. Nevertheless, neither the simulator is rewritten nor SPICE device models are implemented or changed. The model is applied to several static and dynamic simulations of SOI MOSFETs to show the electrothermal interactionKeywords
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