New power device figure of merit for high-frequency applications
- 19 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 10636854,p. 309-314
- https://doi.org/10.1109/ispsd.1995.515055
Abstract
A new power device figure of merit is proposed for high-frequency applications. Based on a theoretical analysis, the impacts of circuit topologies and material properties are examined. This figure of merit is very useful in optimizing or choosing a power device operating in high-frequency circuits. A thin-film SOI power MOSFET is taken as an example, and the effect of its device parameters on the power loss is analyzed to provide a basic guideline for optimization.Keywords
This publication has 4 references indexed in Scilit:
- Analytical approach to breakdown voltages in thin-film SOI power MOSFETsSolid-State Electronics, 1996
- Zero-voltage switching technique in DC/DC convertersIEEE Transactions on Power Electronics, 1990
- Circuit simulation analysis of power dissipation in the main switch of a forward converterElectronics and Communications in Japan (Part I: Communications), 1990
- Power semiconductor device figure of merit for high-frequency applicationsIEEE Electron Device Letters, 1989