Time and Temperature Dependence of Density of Oxidation-Induced Stacking Faults in Diamond-Lapped Silicon
- 1 August 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (8A) , L620
- https://doi.org/10.1143/jjap.23.l620
Abstract
The mechanically damaged silicon wafers are oxidized at temperatures in the range of 950–1150°C for 15 min-128 h in dry oxygen. Oxidation-induced stacking faults (OSF) are delineated by preferential etching. The density of OSF decreases with the increase of both oxidation time and temperature. Unfaulting reactions of OSF are detected by transmission electron microscopy. The annihilation of OSF seems attributable to unfaulting reactions due to the local concentration of the residual stress from mechanical damage and the impingement of OSF.Keywords
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