A new mechanism for spontaneous nanostructure formation on bottom-patterned compliant substrates
- 10 November 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 71 (19) , 2773-2775
- https://doi.org/10.1063/1.120129
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Analysis of In0.07Ga0.93As layers on GaAs compliant substrates by double crystal x-ray diffractionApplied Physics Letters, 1997
- Heterogeneous nucleation of coherently strained islands during epitaxial growth of Ge on Si(110)Applied Physics Letters, 1997
- Strain-modulated epitaxy: A flexible approach to 3-D band structure engineering without surface patterningApplied Physics Letters, 1996
- Assembling strained InAs islands on patterned GaAs substrates with chemical beam epitaxyApplied Physics Letters, 1996
- In situ fabrication of self-aligned InGaAs quantum dots on GaAs multiatomic steps by metalorganic chemical vapor depositionApplied Physics Letters, 1995
- Effects of monolayer coverage, flux ratio, and growth rate on the island density of InAs islands on GaAsApplied Physics Letters, 1995
- Indium migration control on patterned substrates for optoelectronic device applicationsApplied Physics Letters, 1994
- Large scale surface structure formed during GaAs (001) homoepitaxyApplied Physics Letters, 1994
- Indium adatom migration during molecular beam epitaxial growth of strained InGaAs/GaAs single quantum wellsApplied Physics Letters, 1989
- Comparison of damage in the dry etching of GaAs by conventional reactive ion etching and by reactive ion etching with an electron cyclotron resonance generated plasmaJournal of Vacuum Science & Technology B, 1989