Indium migration control on patterned substrates for optoelectronic device applications
- 22 August 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (8) , 1009-1011
- https://doi.org/10.1063/1.112208
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Transform-limited picosecond optical pulses from a mode-locked InGaAs/AlGaAs QW laser with integrated passive waveguide cavity and QW modulatorIEEE Photonics Technology Letters, 1993
- Wavelength tuning in low threshold current, partially pumped InGaAs/AlGaAs ridge waveguide lasersApplied Physics Letters, 1991
- Indium migration and controlled lateral bandgap variations in high-power strained layer InGaAs-AlGaAs lasers grown on nonplanar substratesIEEE Journal of Quantum Electronics, 1991
- Indium adatom migration during molecular beam epitaxial growth of strained InGaAs/GaAs single quantum wellsApplied Physics Letters, 1989
- Problems related to the formation of lateral p–n junctions on channeled substrate (100) GaAs for lasersJournal of Vacuum Science & Technology B, 1988
- Stripe-geometry quantum well heterostructure AlxGa1−xAs-GaAs lasers defined by defect diffusionApplied Physics Letters, 1986
- Low threshold planar buried heterostructure lasers fabricated by impurity-induced disorderingApplied Physics Letters, 1985