Indium migration and controlled lateral bandgap variations in high-power strained layer InGaAs-AlGaAs lasers grown on nonplanar substrates
- 1 June 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 27 (6) , 1470-1475
- https://doi.org/10.1109/3.89965
Abstract
No abstract availableThis publication has 22 references indexed in Scilit:
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