Transform-limited picosecond optical pulses from a mode-locked InGaAs/AlGaAs QW laser with integrated passive waveguide cavity and QW modulator
- 1 August 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 5 (8) , 896-899
- https://doi.org/10.1109/68.238246
Abstract
Using a novel single-top molecular beam epitaxy growth technology on nonplanar substrates, an InGaAs/AlGaAs laser amplifier has been integrated with a 4-mm-long passive waveguide cavity and a QW modulator. Lasing action of the entire structure was achieved by a current of 60 mA flowing through the amplifier section. Mode-locking experiments in which an RF signal was applied to the modulator segment led to nearly-transform-limited pulses with a duration of 4.4 ps and a time-bandwidth product of 0.43.Keywords
This publication has 10 references indexed in Scilit:
- Short pulse generation using multisegment mode-locked semiconductor lasersIEEE Journal of Quantum Electronics, 1992
- Picosecond pulses (2 ps) from hybrid mode-locked AlGaAs QW lasers with integrated active waveguide cavitiesElectronics Letters, 1991
- Indium migration and controlled lateral bandgap variations in high-power strained layer InGaAs-AlGaAs lasers grown on nonplanar substratesIEEE Journal of Quantum Electronics, 1991
- Single and double quantum well lasers with a monolithically integrated passive sectionApplied Physics Letters, 1990
- Transform-limited 1.4 ps optical pulses from a monolithic colliding-pulse mode-locked quantum well laserApplied Physics Letters, 1990
- High-power single-mode strained single quantum well InGaAs/AlGaAs lasers grown by molecular beam epitaxy on nonplanar substratesApplied Physics Letters, 1990
- Indium adatom migration during molecular beam epitaxial growth of strained InGaAs/GaAs single quantum wellsApplied Physics Letters, 1989
- 40 GHz active mode-locking in a 1.5 µm monolithic extended-cavity laserElectronics Letters, 1989
- Problems related to the formation of lateral p–n junctions on channeled substrate (100) GaAs for lasersJournal of Vacuum Science & Technology B, 1988
- Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark EffectPhysical Review Letters, 1984