Migration of gold atoms through thin silicon oxide films
- 1 November 1974
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 45 (11) , 5088-5090
- https://doi.org/10.1063/1.1663192
Abstract
Rapid migration of the goldelectrode on C–SiO x –Au devices has been found for temperatures above the Au/Si eutectic point. Approximate concentration profiles have been determined by means of Rutherford scattering. Electrical measurements have been performed on both virgin and diffused devices. Comment is made on the relevance of electrode migration to the forming process and bistable memory switching in metal‐insulator‐metal devices.This publication has 12 references indexed in Scilit:
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