1/f noise in silicon wafers

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Abstract
The magnitude of 1/ f noise in an ordinary wafer of lightly doped n‐type silicon lacking impurity scattering is found to be three orders of magnitude less than the commonly accepted value. The conductivity fluctuations causing the noise are spatially uncorrelated and approximately scalar, as might be expected for a simple trapping model. Varying surface treatments were found to increase the noise, sometimes in clear association with slight I‐V nonlinearities, but no sample had resistance fluctuations more than one tenth as large as predicted by the Hooge relation.