MOVPE growth and optical properties of AlGaInP/GaInP strained single quantum well structures

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1 January 1991

journal article
Published by Elsevier in Journal of Crystal Growth

Vol. 107 (1-4) , 578-582
https://doi.org/10.1016/0022-0248(91)90524-9

Abstract

No abstract available

Keywords

This publication has 5 references indexed in Scilit:

Electronic energy levels in ${In}_{x}$ ${Ga}_{1 - x}$ As/InP strained-layer superlattices
Physical Review B, 1987
MOCVD growth of AlGaInP at atmospheric pressure using triethylmetals and phosphine
Journal of Crystal Growth, 1986
Reduction of lasing threshold current density by the lowering of valence band effective mass
Journal of Lightwave Technology, 1986
Band-structure engineering for low-threshold high-efficiency semiconductor lasers
Electronics Letters, 1986
Effects of uniaxial stress on the electronic and optical properties of GaAs- ${Al}_{x}$ ${Ga}_{1 - x}$ As quantum wells
Physical Review B, 1985