Status and trends of hemt technology
- 31 December 1985
- journal article
- Published by Elsevier in Superlattices and Microstructures
- Vol. 1 (5) , 369-373
- https://doi.org/10.1016/s0749-6036(85)80001-x
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- High-speed low-power DCFL using planar two-dimensional electron gas FET technologyElectronics Letters, 1982
- High Electron Mobility Transistor LogicJapanese Journal of Applied Physics, 1981
- A New Field-Effect Transistor with Selectively Doped GaAs/n-AlxGa1-xAs HeterojunctionsJapanese Journal of Applied Physics, 1980
- Optimal noise figure of microwave GaAs MESFET'sIEEE Transactions on Electron Devices, 1979