A study of the depth dependence of photoluminescence from thin film CdS/CdTe solar cells using bevel etched samples
- 1 June 1998
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 322 (1-2) , 314-318
- https://doi.org/10.1016/s0040-6090(97)00917-6
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- A photoluminescence study of polycrystalline thin-film CdTe/CdS solar cellsJournal of Crystal Growth, 1998
- Dependence of
CdS CdTe Journal of Crystal Growth, 1996 - Interdiffusion of CdS/CdTe in laser-deposited and RF sputtered alloys, bilayers and solar cellsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1996
- Oxygen doping in CdTe, CdS and ZnSJournal of Crystal Growth, 1992
- Isoelectronic oxygen in II-VI semiconductorsApplied Physics Letters, 1992
- PROCESSING HIGH EFFICIENCY CdTe SOLAR CELLSInternational Journal of Sustainable Energy, 1992
- Cadmium Telluride (CdTe)Published by Elsevier ,1985
- Photoluminescence as a diagnostic of semiconductorsProgress in Crystal Growth and Characterization, 1982
- Cadmium Telluride Nuclear Radiation DetectorsIEEE Transactions on Nuclear Science, 1975
- Characterization of the Transport Properties of Halogen-Doped CdTe Used for Gamma-Ray DetectorsIEEE Transactions on Nuclear Science, 1974