Surface alterations of SiO2 optics by 9.8 and 8.5 eV laser photons
- 1 November 1990
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 125 (1-2) , 107-116
- https://doi.org/10.1016/0022-3093(90)90329-k
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Two-photon processes in defect formation by excimer lasers in synthetic silica glassApplied Physics Letters, 1988
- High-power narrow-band operation and Raman frequency conversion of an electron-beam pumped krypton excimer laserIEEE Journal of Quantum Electronics, 1988
- Mechanism of Intrinsic Si-Center Photogeneration in High-Purity SilicaPhysical Review Letters, 1988
- The model of a triplet self-trapped exciton in crystalline SiO2Journal of Physics C: Solid State Physics, 1988
- Output characteristics of ar excimer laser with various cavity mirrors.The Review of Laser Engineering, 1988
- Electronic excitation mechanism of sputtering and track formation by energetic ions in the electronic stopping regimeNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1986
- High Power Tunable Coherent Radiation Around 126nm with an Argon Excimer LaserThe Review of Laser Engineering, 1986
- Defect structure of glassesJournal of Non-Crystalline Solids, 1985
- Oxygen vacancy model for the E1′ center in SiO2Solid State Communications, 1974
- The band edge of amorphous SiO2 by photoinjection and photoconductivity measurementsSolid State Communications, 1971