Operation of a CMOS microprocessor while immersed in liquid nitrogen
- 1 June 1986
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 21 (3) , 491-492
- https://doi.org/10.1109/jssc.1986.1052556
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Cryogenic behavior of scaled CMOS devicesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1984
- N-channel enhancement-mode MOSFET characteristics from 10 to 300 KIEEE Transactions on Electron Devices, 1981
- Electron trapping in SiO2 at 295 and 77 °KJournal of Applied Physics, 1979
- Very small MOSFET's for low-temperature operationIEEE Transactions on Electron Devices, 1977
- p-MOSFET parameters at cryogenic temperaturesIEEE Transactions on Electron Devices, 1976