Selective Growth of Diamond Thin-Film Employing Yttria-Stabilized Zirconia Thin-Film Mask

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Abstract
A novel process, which employs yttria-stabilized zirconia (YSZ) as a thin film mask, has been developed to obtain selective growth of diamond films. YSZ films were prepared by pulsed ArF excimer laser deposition and rf-diode sputtering, the latter of which offered a much better masking effect than the former when the diamond film was grown by microwave plasma-assisted chemical vapor deposition with CO/H2 source gas. In scanning electron microscope images, the edge part of the selectively grown diamond film revealed a morphology somewhat different from that of the central part. Observed areal distribution of the morphology is an indication of migration of the growth species on the YSZ film mask.