Influence of strain relaxation on the electronic properties of buried quantum wells and wires
- 31 December 1995
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 35 (1-3) , 357-363
- https://doi.org/10.1016/0921-5107(95)01388-1
Abstract
No abstract availableThis publication has 25 references indexed in Scilit:
- Degradation behavior of 0.98-μm strained quantum well InGaAs/AlGaAs lasers under high-power operationIEEE Journal of Quantum Electronics, 1994
- The energy of arrays of dislocations in an anisotropic half-spacePhilosophical Magazine A, 1994
- The determination of the strain in GaAs/GaxIn1–xAs strained-layer structures from measurements of thickness fringe displacementsPhilosophical Magazine A, 1993
- Imaging of stresses in GaAs diode lasers using polarization-resolved photoluminescenceIEEE Journal of Quantum Electronics, 1993
- Elastic misfit stress relaxation in heteroepitaxial SiGe/Si mesa structuresApplied Physics Letters, 1992
- Breakdown of continuum elasticity theory in the limit of monatomic filmsPhysical Review Letters, 1992
- On the electron diffraction contrast of coherently strained semiconductor layersPhilosophical Magazine A, 1991
- Calculation of strain distributions at the edge of strained-layer structuresJournal of Physics: Condensed Matter, 1990
- Valence band engineering in strained-layer structuresSemiconductor Science and Technology, 1989
- Enhanced X-Ray Diffraction from Substrate Crystals Containing Discontinuous Surface FilmsJournal of Applied Physics, 1967