Imaging of stresses in GaAs diode lasers using polarization-resolved photoluminescence
- 1 January 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 29 (1) , 62-68
- https://doi.org/10.1109/3.199245
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Bonding stress measurements from the degree of polarization of facet emission of AlGaAs superluminescent diodesIEEE Journal of Quantum Electronics, 1991
- Local‐Oxidation‐Induced Stress Measured by Raman Microprobe SpectroscopyJournal of the Electrochemical Society, 1990
- Spatially and polarization resolved electroluminescence of 13-μm InGaAsP semiconductor diode lasersApplied Optics, 1989
- Effect of macroscopic stress on accelerated aging of GaInAsP channeled substrate buried heterostructure lasersJournal of Applied Physics, 1989
- Material parameters of In1−xGaxAsyP1−y and related binariesJournal of Applied Physics, 1982
- Improvement in operation lives of GaAlAs visible lasers by introducing GaAlAs buffer layersIEEE Journal of Quantum Electronics, 1981
- Photoelastic waveguides and their effect on stripe-geometry GaAs/Ga1−xAlxAs lasersJournal of Applied Physics, 1979
- Interface stress of AlxGa1−xAs–GaAs layer structuresJournal of Applied Physics, 1973
- Piezo-Electroreflectance in Ge, GaAs, and SiPhysical Review B, 1968