Analysis of Carrier Transport in Vacuum-Evaporated Epitaxial Films of Silicon on Spinel

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Abstract
An attempt has been made to explain the anomalous behavior of carrier mobilities in vacuum‐evaporated heteroepitaxial films of silicon on spinel by taking the reciprocal of the sum of reciprocals of three kinds of mobilities, i.e., dislocation‐scattering mobility, space‐charge scattering mobility, and bulk silicon mobility. This treatment provides a comparatively good fit to the observed values of the film mobilities in the experiment conducted from 77°K to room temperature. It is likely that the dislocation scattering and the space‐charge scattering are the dominant mechanisms in limiting the carrier mobilities, in particular, electron mobilities in the films below the mobilities in bulk silicon, the dislocation scattering being dominant below about 100°K, while the space‐charge scattering is dominant above about 200°K.