Minimization of Interfacial Microroughness for 13–60 Å Ultrathin Gate Oxides
- 1 January 1997
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- 1.5 nm direct-tunneling gate oxide Si MOSFET'sIEEE Transactions on Electron Devices, 1996
- A morphology study of the thermal oxidation of rough silicon surfacesJournal of Vacuum Science & Technology A, 1995
- Si/SiO2 interface states and neutral oxide traps induced by surface microroughnessJournal of Applied Physics, 1995
- Effect of SC1 Process on Silicon Surface Microroughness and Oxide Breakdown CharacteristicsJapanese Journal of Applied Physics, 1995
- The Relationship of the Silicon Surface Roughness and Gate Oxide Integrity in NH4OH/H2O2 MixturesJapanese Journal of Applied Physics, 1992