1/f noise and velocity saturation in punch-through diodes
- 1 July 1980
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 23 (7) , 695-701
- https://doi.org/10.1016/0038-1101(80)90125-2
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Flicker noise in semiconductors: Not a true bulk effectApplied Physics Letters, 1978
- The temperature stability of punch-through diodesSolid-State Electronics, 1978
- Lattice scattering causes 1/ƒ noisePhysics Letters A, 1978
- Discussion of recent experiments on 1/ƒ noisePhysica, 1972
- Carrier mobilities in silicon empirically related to doping and fieldProceedings of the IEEE, 1967
- Dependence of hole velocity upon electric field and hole density for p-type siliconJournal of Physics and Chemistry of Solids, 1967