Liquid phase epitaxial growth of Gal-xInxSb on GaSb by stepwise grading
- 1 March 1978
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 7 (2) , 337-345
- https://doi.org/10.1007/bf02655681
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Liquid-phase epitaxial growth of stepwise-graded InAs1−xSbx–InAs heterostructuresJournal of Vacuum Science and Technology, 1976
- Solution growth of n-type GaxIn1−xSb crystals and application to gunn effectMaterials Research Bulletin, 1974
- Solute diffusion growth of GaxIn1−xSbJournal of Electronic Materials, 1973
- Liquidus and solidus data at 500 °C for the In-Ga-Sb systemJournal of Crystal Growth, 1972
- Improved surface quality of solution grown GaAs and Pb1−xSnxTe epitaxial layers: A new techniqueJournal of Crystal Growth, 1972
- The In-Ga-Sb Ternary Phase DiagramJournal of the Electrochemical Society, 1971
- The gunn effect and conduction band structure in GaxIn1−xSb alloysSolid State Communications, 1969
- Dislocation morphology in graded heterojunctions: GaAs1?xPxJournal of Materials Science, 1969