Formation of Quasicrystalline AlCuFe by Physical Vapor Deposition: Phase Selection via Nanocluster Nucleation
- 13 January 1997
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 78 (2) , 262-265
- https://doi.org/10.1103/physrevlett.78.262
Abstract
We study the crystalline state of a very thin AlCuFe film, sputter deposited at the relatively low substrate temperature of 460 °C. High-resolution transmission electron microscopy shows that the layer consists of isolated quasicrystalline nanoparticles, although, at the given composition and deposition temperature, the quasicrystalline state is metastable. The nucleation process of the quasicrystalline phase is discussed in terms of a liquidlike to solid transition of nanoclusters.Keywords
This publication has 22 references indexed in Scilit:
- Production of High-Quality Thin-Film Samples of Al-Cu-Fe Icosahedral QuasicrystalJapanese Journal of Applied Physics, 1995
- Quasicrystals as a hierarchy of clustersPhysical Review Letters, 1994
- Phason-induced transformations of icosahedral Al—Cu—FePhilosophical Magazine Letters, 1993
- Three states of : Amorphous, crystalline, and quasicrystallinePhysical Review B, 1992
- Transient modulated chemical order during the quasicrystal-to-crystal phase transition of Al—Fe—CuPhilosophical Magazine Letters, 1992
- Proximity of a metal-insulator transition in icosahedral phases of high structural qualityPhysical Review Letters, 1991
- The preparation of thin films by physical vapour deposition methodsThin Solid Films, 1990
- Quasicrystal structure in Al─Cu─Fe annealed alloyPhilosophical Magazine Letters, 1988
- Sputter deposition of icosahedral AlMn and AlMnSiScripta Metallurgica, 1987
- Metallic Phase with Long-Range Orientational Order and No Translational SymmetryPhysical Review Letters, 1984