STM study of the SiC(0001) √3 × √3 surface
- 1 June 1995
- journal article
- Published by Elsevier in Surface Science
- Vol. 330 (1) , L639-L645
- https://doi.org/10.1016/0039-6028(95)00427-0
Abstract
No abstract availableThis publication has 17 references indexed in Scilit:
- Comparison of 6H-SiC, 3C-SiC, and Si for power devicesIEEE Transactions on Electron Devices, 1993
- Fabrication of SiC epitaxial structures for devices by the method of sublimation in an open systemMaterials Science and Engineering: B, 1992
- Evidence for trimer reconstruction of Si(111) √3 × √3 -Sb: Scanning tunneling microscopy and first-principles theoryPhysical Review B, 1990
- Effects of coverage on the geometry and electronic structure of Al overlayers on Si(111)Physical Review B, 1989
- Surface structure and composition of β- and 6H-SiCSurface Science, 1989
- An STM study of the gallium induced × reconstruction of Si(111)Surface Science, 1988
- Indium-induced reconstructions of the Si(111) surface studied by scanning tunneling microscopyPhysical Review B, 1987
- Unoccupied surface states revealing the Si(111)√3 √3-Al, -Ga, and -In adatom geometriesPhysical Review B, 1987
- Origin of surface states on Si(111)(7×7)Physical Review Letters, 1986
- LEED and Auger electron observations of the SiC(0001) surfaceSurface Science, 1975