Evidence for trimer reconstruction of Si(111) √3 × √3 -Sb: Scanning tunneling microscopy and first-principles theory
- 15 October 1990
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 42 (11) , 7230-7233
- https://doi.org/10.1103/physrevb.42.7230
Abstract
Scanning-tunneling-microscopy images of the Si(111) √3 × √3 -Sb surface show a trigonal lattice of protrusions, with a characteristic dependence on bias voltage. When probing filled surface states, the protrusions consist of three topographic maxima, while probing empty surface states gives a single maximum. These observations are interpreted in terms of an Sb-trimer model, the structure of which is obtained through first-principles calculations. Charge-density contours show that the three maxima seen when probing filled states can be directly related to the positions of the Sb-trimer atoms.Keywords
This publication has 10 references indexed in Scilit:
- Photoelectron and inverse photoelectron spectroscopy studies of the surfaceSurface Science, 1988
- Photoelectron diffraction study of the atomic geometry of the Si(111)√3×√3-Sb surfaceSurface Science, 1988
- Electronic Structure of Localized Si Dangling-Bond Defects by Tunneling SpectroscopyPhysical Review Letters, 1988
- Low Energy Electron Diffraction and X-Ray Photoelectron Spectroscopy Studies of the Formation of Submonolayer Interfaces of Sb/Si(111)Japanese Journal of Applied Physics, 1988
- Indium-induced reconstructions of the Si(111) surface studied by scanning tunneling microscopyPhysical Review B, 1987
- Unoccupied surface states revealing the Si(111)√3 √3-Al, -Ga, and -In adatom geometriesPhysical Review B, 1987
- Electronic structure, atomic structure, and the passivated nature of the arsenic-terminated Si(111) surfacePhysical Review B, 1987
- Electronic Structure of the Si(111)2 × 1 Surface by Scanning-Tunneling MicroscopyPhysical Review Letters, 1986
- Role of chemical potentials in surface reconstruction: A new model and phase transition of GaAs(111)2x2Physical Review Letters, 1986
- The structure and properties of metal-semiconductor interfacesSurface Science Reports, 1982