Photoluminescence and ultraviolet lasing of polycrystalline ZnO thin films prepared by the oxidation of the metallic Zn
- 1 November 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 75 (18) , 2761-2763
- https://doi.org/10.1063/1.125141
Abstract
We report a simple method for preparing polycrystalline ZnO thin films with good luminescent properties: the oxidization of metallic Zn films. In photoluminescence (PL) studies at room temperature for wavelengths between 370 and 675 nm, we have observed a single exciton peak around 390 nm without any deep-level emission and a small PL full width at half maximum (23 meV), indicating that the concentrations of the defects responsible for the deep-level emissions are negligible. We have also observed optically pumped lasing action in these films. The threshold intensity for lasing was ∼9 MW/cm2.Keywords
This publication has 25 references indexed in Scilit:
- Random Laser Action in Semiconductor PowderPhysical Review Letters, 1999
- Luminescence behaviour of chemically grown ZnO quantum dotsSemiconductor Science and Technology, 1998
- Plasma assisted molecular beam epitaxy of ZnO on c -plane sapphire: Growth and characterizationJournal of Applied Physics, 1998
- Room temperature excitonic stimulated emission from zinc oxide epilayers grown by plasma-assisted MBEJournal of Crystal Growth, 1998
- Effect of Hydrogenation on ZnO LuminescenceJapanese Journal of Applied Physics, 1997
- The Influence of Processing Conditions on Point Defects and Luminescence Centers in ZnOJournal of the Electrochemical Society, 1993
- Semiconductor clusters in the sol-gel process: quantized aggregation, gelation, and crystal growth in concentrated zinc oxide colloidsJournal of the American Chemical Society, 1991
- The preparation and some properties of transparent conducting ZnO for use in solar cellsCanadian Journal of Physics, 1982
- Photoluminescence in sputtered ZnO thin filmsPhysica Status Solidi (a), 1981
- Luminescent Transitions Associated With Divalent Copper Impurities and the Green Emission from Semiconducting Zinc OxidePhysical Review Letters, 1969