660 nm wavelength GaInAsP/AlGaAs distributed feedback lasers
- 31 March 1988
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 24 (7) , 416-418
- https://doi.org/10.1049/el:19880282
Abstract
GaInAsP/AlGaAs distributed feedback (DFB) lasers emitting at 660 nm were fabricated by liquid phase epitaxy for the first time. DFB mode oscillation in a single longitudinal mode was observed in the temperature range from 22°C to −24°c and in the current range up to 1.25 times the threshold (here, the output power was 5 mW). The temperature dependence of lasing wavelength was as small as 0.04 nm/deg.Keywords
This publication has 1 reference indexed in Scilit:
- 720-780 nm AlGaAs/GaAs DFB lasers with InGaAsP waveguiding layersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1987