Voigt effect in diluted magnetic semiconductors: Te and Se
- 15 November 1991
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 44 (19) , 10551-10558
- https://doi.org/10.1103/physrevb.44.10551
Abstract
We report a giant Voigt effect in diluted magnetic semiconductors Te and Se and present an excitonic model that describes its dispersion and dependence, M being the magnetization. We discuss the Voigt effect in Te (0.10<x<0.45), a zinc-blende diluted magnetic semiconductor, in the context of this model. In addition, we present experimental results for the Voigt effect in Se (x=0.26 and 0.31), a diluted magnetic semiconductor with wurtzite structure, where the effect is considerably more complicated due to its lower symmetry. Specifically, we present a striking anisotropy of the Voigt effect in Se, which depends on the relative orientation of the applied magnetic field with respect to the optic (c^) axis of the crystal.
Keywords
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