Low-Temperature Preparation of Pb(Zr, Ti)O3 Thin Films on (Pb, La)TiO3 Buffer Layer by Multi-Ion-Beam Sputtering
- 1 September 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (9S) , 4057-4060
- https://doi.org/10.1143/jjap.32.4057
Abstract
Ferroelectric lead-zirconate-titanate (PZT) thin films were successfully fabricated by the multi-ion-beam sputtering technique in an oxygen ambient at a low substrate temperature of 415°C. By inserting lead-lanthanum-titanate (PLT) buffer layers between substrates and PZT films, the perovskite-PZT thin films could be epitaxially grown on (100)MgO, (100)Pt/MgO and (111)Pt/Ti/SiO2/Si substrates. These films, even at thickness values of as low as 630 Å, showed excellent ferroelectric properties with a remanent polarization of 20 µC/cm2, coercive field of 200 kV/cm, and a relative dielectric constant of 700.Keywords
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