Carrier-Temperature and Wavelength-Switching in GaAs Single-Quantum-Well Baser Diode

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Abstract
Carrier temperature (T C) was estimated from the high-energy tails in the emission spectra for single-quantum-well laser diodes under pulsed operating conditions. The T C in the lasers with 100 and 120 Å thick-GaAs active layers rose appreciably as the injection current increased, while the T C remained at around the lattice temperature (T L) for the 250 Å laser. It was suggested that the increase of T C is essential to drive lasing-wavelength switching from the n=1 transition to the n=2 transition.