Anomalous temperature dependence of threshold for thin quantum well AlGaAs diode lasers
- 7 July 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (1) , 16-18
- https://doi.org/10.1063/1.97086
Abstract
Thermally induced threshold wavelength shifts of 50 nm have been observed in short cavity length diode lasers fabricated from thin quantum well AlGaAs. Analysis suggests that the high-energy radiation is generated by transitions between the n=2 level in the conduction band and the n=2 heavy hole level in the valence band. The threshold characteristic temperature (T0) of the laser material is found to be a strong function of cavity length.Keywords
This publication has 13 references indexed in Scilit:
- Anomalous length dependence of threshold for thin quantum well AlGaAs diode lasersElectronics Letters, 1986
- Homogeneous gain saturation in GaAs/AlGaAs quantum well lasersApplied Physics Letters, 1985
- A critical review of heterojunction band offsetsJournal of Vacuum Science & Technology B, 1985
- Some characteristics of the GaAs/GaAlAs graded-index separate-confinement heterostructure quantum well laser structureApplied Physics Letters, 1984
- Stimulated emission of GaAs-Al0.6Ga0.4As multiple quantum well structures grown by metalorganic chemical vapor depositionApplied Physics Letters, 1984
- Calculated threshold current of GaAs quantum well lasersJournal of Applied Physics, 1982
- Metalorganic Chemical Vapor DepositionAnnual Review of Materials Science, 1982
- Temperature dependence of threshold current of GaAs quantum well lasersElectronics Letters, 1982
- A graded-index waveguide separate-confinement laser with very low threshold and a narrow Gaussian beamApplied Physics Letters, 1981
- Quantum States of Confined Carriers in Very Thin -GaAs- HeterostructuresPhysical Review Letters, 1974