50-GHz bandwidth base-band amplifiers using GaAs-based HBTs
- 23 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 143-146
- https://doi.org/10.1109/gaas.1997.628257
Abstract
Base-band amplifiers have been demonstrated using AlGaAs/InGaAs HBTs with regrown base contacts. The transimpedance amplifier achieved a bandwidth of 49.3 GHz and a transimpedance gain of 43.7 dB /spl Omega/. The Darlington feedback amplifier achieved a bandwidth of 54.7 GHz and a gain of 8.2 dB. These are the widest bandwidths yet reported for lumped-circuit-design amplifiers. These performances suggest the great potential of these amplifiers for use in future optical communication and millimeter-wave applications.Keywords
This publication has 5 references indexed in Scilit:
- A 16-dB DC-to-50-GHz InAlAs/InGaAs HEMT distributed baseband amplifier using a new loss compensation techniquePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Low dc power high-gain bandwidth product InAlAs/InGaAs-InP HBT direct-coupled amplifiersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Novel distributed baseband amplifying techniques for 40-Gbit/s optical communicationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- High-f/sub max/ AlGaAs/InGaAs and AlGaAs/GaAs HBT's with p/sup +//p regrown base contactsIEEE Transactions on Electron Devices, 1995
- Emitter size effect on current gain in fully self-aligned AlGaAs/GaAs HBT's with AlGaAs surface passivation layerIEEE Electron Device Letters, 1990