Growth of improved quality 3C-SiC films on 6H-SiC substrates
- 2 April 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (14) , 1353-1355
- https://doi.org/10.1063/1.102512
Abstract
Previously reported chemical vapor deposition of 3C-SiC on 6H-SiC has resulted in films with a high density of double positioning boundaries (DPBs). We have found that growth on as-grown faces of 6H-SiC crystals can yield films that are largely free of DPBs. The (111) 3C-SiC films, up to 12 μm thick, were evaluated by optical and electron microscopy and low-temperature photoluminescence (LTPL). The LTPL spectra of the films were similar to those of high quality Lely-grown 3C-SiC.Keywords
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