Room temperature pulsed oscillation of GaAlAs/GaAs surface emitting junction laser
- 1 June 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 21 (6) , 663-668
- https://doi.org/10.1109/jqe.1985.1072726
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Room-temperature pulsed oscillation of GaAlAs/GaAs surface emitting injection laserApplied Physics Letters, 1984
- Pulsed oscillation of GaAlAs/GaAs surface-emitting injection laserElectronics Letters, 1984
- Lasing characteristics of improved GaInAsP/InP surface emitting injection lasersElectronics Letters, 1983
- Threshold Condition and Design of Surface Emitting GaInAsP/InP Injection LasersJapanese Journal of Applied Physics, 1983
- GaInAsP/InP Surface Emitting Injection Laser with Buried HeterostructuresJapanese Journal of Applied Physics, 1981
- Gain Calculation of Undoped GaAs Injection Laser Taking Account of Electronic Intra-Band RelaxationJapanese Journal of Applied Physics, 1981
- GaInAsP/InP Surface Emitting Injection LasersJapanese Journal of Applied Physics, 1979
- Current dependence of spontaneous carrier lifetimes in GaAs–Ga1-xAlx As double-heterostructure lasersApplied Physics Letters, 1974
- Additional data on the effect of doping on the lasing characteristics of GaAs AlxGa1-xAs double-heterostructure lasersIEEE Journal of Quantum Electronics, 1973