Simulation and Experimental Study of the pH-Sensing Property for AlN Thin Films
- 1 October 2001
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 40 (10R)
- https://doi.org/10.1143/jjap.40.5900
Abstract
The aluminum nitride (AlN) thin film has been investigated for using in pH-ISFET (ion-sensitive field-effect transistor) devices. The AlN thin film was used as the sensitive membrane for simulating and analyzing the pH sensing properties. According to the simulation, we find that the AlN/SiO2 gate ISFET has high pH sensitivity and has a linear response for the current–voltage (I–V) and capacitance–voltage (C–V) curves. In the simulation, the pH sensitivity is about 52–59.8 mV/pH for adapting in all testing solutions (pH=1–14). In addition, in the experiment, the I–V and C–V curves of AlN/SiO2 gate ISFET were also measured and the pH-sensing property was discussed in the different buffer solutions.Keywords
This publication has 14 references indexed in Scilit:
- Drift behavior of ISFETs with a-Si:H-SiO2 gate insulatorMaterials Chemistry and Physics, 2000
- Ion sensitive field effect transistor with amorphous tungsten trioxide gate for pH sensingSensors and Actuators B: Chemical, 2000
- Study on pHpzc and surface potential of tin oxide gate ISFETMaterials Chemistry and Physics, 1999
- Investigation of d.c.-reactive magnetron-sputtered AlN thin films by electron microprobe analysis, X-ray photoelectron spectroscopy and polarised infra-red reflectionSurface and Coatings Technology, 1998
- Study of amorphous tin oxide thin films for ISFET applicationsSensors and Actuators B: Chemical, 1998
- Characteristics of hydrogenated aluminum nitride films prepared by radio frequency reactive sputtering and their application to surface acoustic wave devicesJournal of Vacuum Science & Technology A, 1997
- Hysteresis in Al2O3-gate ISFETsSensors and Actuators B: Chemical, 1990
- Ion-sensitive field-effect transistor with silicon nitride gate for pH sensingInternational Journal of Electronics, 1989
- Basic properties of the electrolyte—SiO2—Si system: Physical and theoretical aspectsIEEE Transactions on Electron Devices, 1979
- Site-binding model of the electrical double layer at the oxide/water interfaceJournal of the Chemical Society, Faraday Transactions 1: Physical Chemistry in Condensed Phases, 1974