LVIII. A Junction Transistor with High Current Gain
- 1 May 1956
- journal article
- research article
- Published by Taylor & Francis in Journal of Electronics and Control
- Vol. 1 (6) , 565-579
- https://doi.org/10.1080/00207215608961461
Abstract
A new transistor using a PN junction emitter and an NN+ junction collector and with electrical characteristic similar to those of a point-contact transistor is introduced. A description of the transistor, the method of fabrication and an account of its electrical properties are given. Throughout the paper, comparisons are made between the properties of PNN+ transistors and those of point-contact transistors.Keywords
This publication has 4 references indexed in Scilit:
- A germanium point-contact transistor to operate at high ambient temperaturesBritish Journal of Applied Physics, 1955
- Carrier Concentration Disturbances in SemiconductorsProceedings of the Physical Society. Section B, 1955
- New advances in the junction transistorBritish Journal of Applied Physics, 1954
- Mobility of Holes and Electrons in High Electric FieldsPhysical Review B, 1953