A field-ion microscope study of ion-implantation in iridium II. results and discussion

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Abstract
The methods of data analysis described in the preceding paper (O'Connor and Ralph 1972) are applied to a determination of the damage and implant profiles for iridium specimens bombarded with kev ions of carbon, Oxygen, xenon, silver and iron. It is shown that bright spot counting is a valid technique and can, in suitable circumstances, lead to a direct derivation of the implant profile. The damage profile in all cases is positioned deeper into the specimen than the implant profile and, since the displacement between them increases with decreasing temperature of irradiation, it is concluded that focused replacement sequences provide the main method for the transport of energy. The effects of recoil implantation of surface contaminant species are observed directtly, and it is shown that the concentration of impurity species has an important effect on the annealing behaviour of ion-implanted specimens.