Subthreshold design considerations for insulated gate field-effect transistors

Abstract

A knowledge of subthreshold behavior in an insulated gate field-effect transistor is important for circuits with low leakage specifications. This paper discusses the effect of drain voltage on the subthreshold region as the channel length becomes shorter, the effect of substrate bias on both the shift in and the slope of the subthreshold curves, and the effect of temperature on the subthreshold current characteristics. It is shown that all these effects can be incorporated into a simple one-dimensional model.

Keywords

This publication has 10 references indexed in Scilit:

An analysis of the threshold voltage for short-channel IGFET's
Solid-State Electronics, 1973
Subthreshold characteristics of insulated-gate field-effect transistors
IEEE Transactions on Circuit Theory, 1973
Steady State Mathematical Theory for the Insulated Gate Field Effect Transistor
IBM Journal of Research and Development, 1973
Leakage currents of m.o.s. devices under surface-depletion conditions
Electronics Letters, 1972
An accurate large-signal MOS transistor model for use in computer-aided design
IEEE Transactions on Electron Devices, 1972
Ion-implanted complementary MOS transistors in low-voltage circuits
IEEE Journal of Solid-State Circuits, 1972
Low level currents in insulated gate field effect transistors
Solid-State Electronics, 1972
Subthreshold drain leakage currents in MOS field-effect transistors
IEEE Transactions on Electron Devices, 1972
Technology and performance of integrated complementary MOS circuits
IEEE Journal of Solid-State Circuits, 1969
Effects of diffusion current on characteristics of metal-oxide (insulator)-semiconductor transistors
Solid-State Electronics, 1966