Emission from a Semi-Insulating Layer in AlGaAs-GaAs Double Heterostructures
- 16 September 1985
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 91 (1) , K93-K96
- https://doi.org/10.1002/pssa.2210910160
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Double heterostructure lasers prepared by LPE on medium‐quality GaAs substrates under controlled as vapour conditionsCrystal Research and Technology, 1983
- High resistivity interfacial layers due to compensation by Sulfur in (Al,Ga)As devicesIEEE Electron Device Letters, 1981
- New contact resistance profiling method for the assessment of III–V alloy multilayer structuresElectronics Letters, 1978
- A GaAs-AlxGa1-xAs Double Heterostructure Planar Stripe LaserJapanese Journal of Applied Physics, 1973