Purity evaluation of n type GaAs LSA diodes from low-field temperature-dependent mobility
- 1 December 1972
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 5 (12) , 2266-2272
- https://doi.org/10.1088/0022-3727/5/12/315
Abstract
Measurements are presented of the temperature and impurity dependence of the subthreshold current-voltage characteristic of n type GaAs LSA diodes. They are compared with the theoretical calculations of Ruch and Fawcett; and a simple technique is derived for purity assessment of assembled diodes.Keywords
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