Partial breakdown of the tunnel oxide in floating gate devices
- 19 May 1997
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 41 (5) , 774-777
- https://doi.org/10.1016/s0038-1101(96)00220-1
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Modeling and characterization of gate oxide reliabilityIEEE Transactions on Electron Devices, 1988
- A Two‐Step Oxidation Process to Improve the Electrical Breakdown Properties of Thin OxidesJournal of the Electrochemical Society, 1985
- Breakdown in silicon oxides—correlation with Cu precipitatesApplied Physics Letters, 1984
- Leakage and Breakdown in Thin Oxide Capacitors—Correlation with Decorated Stacking FaultsJournal of the Electrochemical Society, 1983