Gate current 1/f noise in GaAs MESFET's
- 1 July 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 35 (7) , 1071-1075
- https://doi.org/10.1109/16.3366
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- A chemical and structural investigation of Schottky and ohmic Au/GaAs contactsJournal of Vacuum Science & Technology A, 1987
- Experimental studies on 1/f noiseReports on Progress in Physics, 1981
- Noise in MESFETs in the Range of 1–100 MHzPublished by Springer Nature ,1978
- Conductance noise investigations with four arbitrarily shaped and placed electrodesApplied Physics A, 1977
- On the calculation of 1/f noise of contactsApplied Physics B Laser and Optics, 1976
- Generation-recombination noise in the channel of GaAs Schottky-gate field-effect transistorsElectronics Letters, 1976