Potential and field distributions in LDD structures in the subthreshold region
- 1 May 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 39 (5) , 1245-1246
- https://doi.org/10.1109/16.129115
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- An analytical model for the lateral channel electric field in LDD structuresIEEE Transactions on Electron Devices, 1990
- An analytical model for LDD drain structuresIEEE Transactions on Electron Devices, 1988
- A model for the electric field in lightly doped drain structuresIEEE Transactions on Electron Devices, 1987
- Dependence of channel electric field on device scalingIEEE Electron Device Letters, 1985