An analytical model for the lateral channel electric field in LDD structures

This publication has 11 references indexed in Scilit:

• An analytical model for LDD drain structures
  IEEE Transactions on Electron Devices, 1988
• A pseudo-two-dimensional analysis of short channel MOSFETs
  Solid-State Electronics, 1988
• An improved method of MOSFET modeling and parameter extraction
  IEEE Transactions on Electron Devices, 1987
• A model for the electric field in lightly doped drain structures
  IEEE Transactions on Electron Devices, 1987
• Optimum design of n⁺-n^-double-diffused drain MOSFET to reduce hot-carrier emission
  IEEE Transactions on Electron Devices, 1985
• The effect of high fields on MOS device and circuit performance
  IEEE Transactions on Electron Devices, 1984
• MINIMOS—A two-dimensional MOS transistor analyzer
  IEEE Transactions on Electron Devices, 1980
• Design and characteristics of the lightly doped drain-source (LDD) insulated gate field-effect transistor
  IEEE Transactions on Electron Devices, 1980
• High-accuracy MOS models for computer-aided design
  IEEE Transactions on Electron Devices, 1980
• Field-dependent mobility model for two-dimensional numerical analysis of MOSFET's
  IEEE Transactions on Electron Devices, 1979