An improved method of MOSFET modeling and parameter extraction
- 1 August 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 34 (8) , 1676-1680
- https://doi.org/10.1109/t-ed.1987.23136
Abstract
A method is presented to accurately determine MOSFET modeling parameters from a single linear region (VDS< 2kBT/q)ID- VGSmeasurement based on the operation of a single transistor in the strongly inverted regime. The intrinsic values of the surface scattering parameter θsand the transistor gain β0may be separated from the series resistance Rsand drain bias VDSeffects while including band bending beyond the 2φFpoint. The mobility (excluding surface scattering effects), threshold voltage, bulk doping, and flat-band voltage are also determined.Keywords
This publication has 10 references indexed in Scilit:
- Modeling of transconductance degradation and extraction of threshold voltage in thin oxide MOSFET'sSolid-State Electronics, 1987
- Electron mobility in short-channel MOSFET's with series resistancesIEEE Transactions on Electron Devices, 1983
- Surface roughness scattering at the Si–SiO2 interfaceJournal of Vacuum Science & Technology B, 1983
- Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfacesIEEE Transactions on Electron Devices, 1980
- High-accuracy MOS models for computer-aided designIEEE Transactions on Electron Devices, 1980
- Analytical i.g.f.e.t. model including drift and diffusion currentsIEE Journal on Solidstate and Electron Devices, 1978
- On the role of scattering by surface roughness in silicon inversion layersSurface Science, 1973
- Experimental Verification of the Surface Quantization of an-Type Inversion Layer of Silicon at 300 and 77°KPhysical Review B, 1972
- An accurate large-signal MOS transistor model for use in computer-aided designIEEE Transactions on Electron Devices, 1972
- Effects of diffusion current on characteristics of metal-oxide (insulator)-semiconductor transistorsSolid-State Electronics, 1966