Roughness Assessment of Polysilicon Using Power Spectral Density
- 1 December 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (12R) , 5671-5674
- https://doi.org/10.1143/jjap.32.5671
Abstract
Atomic force microscopy (AFM) has been used to investigate the surface morphology of polysilicon deposits grown under two different temperature conditions. We also present results obtained with scanning tunneling microscopy (STM) and transmission electron microscopy (TEM). Surface morphology data have been quantitatively analysed and compared using standard roughness criteria such as the root mean square of the surface roughness. Moreover, spatial frequency analysis of roughness power spectrum is used to determine characteristic dimensions in the surface plane.Keywords
This publication has 5 references indexed in Scilit:
- Quantitative Microroughness Analysis down to the Nanometer ScaleEurophysics Letters, 1993
- Scanning tunneling microscopy investigations of polysilicon films under solutionJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Grain Boundary Effects on the Carrier Mobility of PolysiliconPhysica Status Solidi (a), 1990
- Polycrystalline Silicon for Integrated Circuit ApplicationsPublished by Springer Nature ,1988
- Surface Roughness and Electrical Conduction of Oxide/Polysilicon InterfacesJournal of the Electrochemical Society, 1986