Palladium and platinum gate metal-oxide-semiconductor capacitors in hydrogen and oxygen mixtures
- 1 October 1982
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 41 (7) , 654-655
- https://doi.org/10.1063/1.93638
Abstract
A comparison is made between palladium (Pd) and platinum (Pt) as gates in metal-oxide-semiconductor devices in different hydrogen/oxygen mixtures. We have shown that Pd is superior as gate material for detection of small amounts of hydrogen in room ambient. At high hydrogen concentrations Pt would be more suitable.Keywords
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