Properties of Different Stacking Faults that Cause Degradation in SiC PiN Diodes
- 15 September 2003
- journal article
- Published by Trans Tech Publications, Ltd. in Materials Science Forum
- Vol. 433-436, 913-916
- https://doi.org/10.4028/www.scientific.net/msf.433-436.913
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Structural defects in electrically degraded 4H-SiC p+/n−/n+ diodesApplied Physics Letters, 2002
- Dislocation evolution in 4H-SiC epitaxial layersJournal of Applied Physics, 2002
- Structure of recombination-induced stacking faults in high-voltage SiC p–n junctionsApplied Physics Letters, 2002
- Localized electronic states around stacking faults in silicon carbidePhysical Review B, 2001