Structure of recombination-induced stacking faults in high-voltage SiC p–n junctions
Top Cited Papers
- 4 February 2002
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 80 (5) , 749-751
- https://doi.org/10.1063/1.1446212
Abstract
The structure of stacking faults formed in forward-biased 4H- and 6H-SiC p–n− diodes was determined using conventional and high-resolution transmission electron microscopy. Typical fault densities were between 103 and 104 cm−1. All observed faults were isolated single-layer Shockley faults bound by partial dislocations with Burgers vector of a/3〈1–100〉-type.Keywords
This publication has 9 references indexed in Scilit:
- On transition temperatures in the plasticity and fracture of semiconductorsPhilosophical Magazine A, 2001
- Long Term Operation of 4.5kV PiN and 2.5kV JBS DiodesMaterials Science Forum, 2001
- Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC DiodesMaterials Science Forum, 2001
- 5.5 kV Bipolar Diodes From High Quality CVD 411-SiCMRS Proceedings, 1998
- Bright-line defect formation in silicon carbide injection diodesApplied Physics Letters, 1997
- A 4.5 kV 6H silicon carbide rectifierApplied Physics Letters, 1995
- High performance of high-voltage 4H-SiC Schottky barrier diodesIEEE Electron Device Letters, 1995
- Polytypic transformations in SiC: the role of TEMUltramicroscopy, 1993
- Defects in plastically deformed 6H SiC single crystals studied by transmission electron microscopyPhilosophical Magazine A, 1988