Bright-line defect formation in silicon carbide injection diodes
- 22 December 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 71 (25) , 3700-3702
- https://doi.org/10.1063/1.120486
Abstract
Irreversible formation of a network of linear defects has been observed for images showing recombination luminescence from injection diodes in hexagonal silicon carbide. The defects are related to dislocations that are initially formed as a result of thermal stress near the tip of the contact probe and subsequently propagate through the diode area. The dislocation network appears in the images of the electroluminescence as bright-line defects, in contrast to the well-known dark-line defects due to degradation of gallium–arsenide-based light-emitting devices. Higher forward currents are found to promote the dislocation growth.Keywords
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