Structural phase transitions and optical absorption ofunder pressure
- 15 April 1991
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 43 (12) , 9635-9642
- https://doi.org/10.1103/physrevb.43.9635
Abstract
We have investigated high-pressure optical and structural properties of the ternary chalcogenide by optical absorption and reflection and by powder x-ray diffraction. The fundamental absorption edge of in the ambient-pressure β- phase is observed at 2.03 eV. The corresponding band gap is either indirect or pseudodirect. A higher-lying direct absorption edge is observed near 2.9 eV. The variation of these gaps with pressure has been measured up to the first phase transition (4.2 GPa). We propose a tentative assignment of interband transitions based on the band structure of related chalcopyrite compounds and by taking into account the measured pressure coefficients. At 4.2 GPa transforms from the orthorhombic β--type to the cubic NaCl-type structure. At room temperature the NaCl phase is metastable from ambient pressure up to at least 25 GPa. Above 1.5 GPa thermal annealing of the NaCl phase at 210 °C–230°C causes ordering of the cations and a transition to the α--type structure (rhombohedral; R3¯m). Annealing at 210°C–230°C below 1 GPa results in a phase transformation from the metastable α- or NaCl phases to the chalcopyrite-type phase (tetragonal; I4¯2d). Reflectivity spectra show the high-pressure phases to be nonmetallic.
Keywords
This publication has 40 references indexed in Scilit:
- Cubic ZnS under pressure: Optical-absorption edge, phase transition, and calculated equation of statePhysical Review B, 1990
- Properties and applications of copper indium diselenideCritical Reviews in Solid State and Materials Sciences, 1988
- Pressure dependence of direct and indirect optical absorption in GaAsPhysical Review B, 1987
- AIBIIICVI2‐Halbleiter mit ChalcopyritstrukturZeitschrift für Chemie, 1987
- Bond Ionicities and Structural Trends in Some LiBIIIC CompoundsCrystal Research and Technology, 1986
- Low-temperature studies of the photoluminescence in CdS under hydrostatic pressurePhysical Review B, 1985
- Pressure-induced phase transformations in the chalcopyrite-structure compounds: CuGaand AgGaPhysical Review B, 1981
- Annealing effects on electrical properties of LiInSe2Journal of Applied Physics, 1981
- Pressure dependence of the energy gap in some I-III-compound semiconductorsPhysical Review B, 1976
- The Lowest Conduction Band Minima of A2B4C‐Type SemiconductorsPhysica Status Solidi (b), 1972